In-circuit loss measurement of a high-frequency integrated power electronics module

被引:2
|
作者
Liu, Wenduo [1 ]
van Wyk, Jacobus Daniel [2 ]
Lu, Bing [3 ]
机构
[1] Int Rectifier Corp, El Segundo, CA 90245 USA
[2] Univ Johannesburg, Dept Elect & Elect Engn, ZA-2006 Johannesburg, South Africa
[3] Texas Instruments Inc, Manchester, NH 03101 USA
关键词
electrical loss measurement; integrated module; power electronics;
D O I
10.1109/TIM.2007.915152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a practical approach to accurately measure the in-circuit power loss of an integrated power electronics module. Based on several reasonable assumptions, the heat flux out of the module is related to the temperature drop across the thermal resistance material in the heat dissipation path. By performing a calibration experiment, the total dissipated heat can be identified. The experimental results prove the high accuracy of this measurement method. This measurement method can be extended to other situations when the assumptions that are applicable to this experiment are satisfied.
引用
收藏
页码:1394 / 1402
页数:9
相关论文
共 50 条
  • [31] Integrated Common-Mode Filter for GaN Power Module With Improved High-Frequency EMI Performance
    Jia, Niu
    Tian, Xingyue
    Xue, Lingxiao
    Bai, Hua
    Tolbert, Leon M.
    Cui, Han
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (06) : 6897 - 6901
  • [32] Measurement of IGBT High-Frequency Input Impedance in Short Circuit
    Abbate, Carmine
    Busatto, Giovanni
    Sanseverino, Annunziata
    Velardi, Francesco
    Iavarone, Sara
    Ronsisvalle, Cesare
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2017, 32 (01) : 584 - 592
  • [33] High-Frequency-Measurement-Based Circuit Modeling and Power/Ground Integrity Evaluation of Integrated Circuit Packages
    Kim, Heungkyu
    Eo, Yungseon
    IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2008, 31 (04): : 910 - 918
  • [34] High-Frequency Transformer Loss Measurement and Modeling: A DC Loss Method
    Yang, Deqiu
    Wang, Binhao
    Shao, Shuai
    Zhang, Junming
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (04) : 5635 - 5645
  • [35] Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics
    Hasan, Muhammad Mahmudul
    Wang, Chunlei
    Pala, Nezih
    Shur, Michael
    NANOMATERIALS, 2024, 14 (05)
  • [36] A Circuit Simulation Model for High-Frequency Power MOSFET's
    Shenai, Krishna
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (03) : 539 - 547
  • [37] An Efficient High-Frequency Drive Circuit for GaN Power HFETs
    Wang, Bo
    Tipirneni, Naveen
    Riva, Marco
    Monti, Antonello
    Simin, Grigory
    Santi, Enrico
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2009, 45 (02) : 843 - 853
  • [38] HIGH-VOLTAGE HIGH-FREQUENCY POWER-SWITCHING TRANSISTOR MODULE WITH SWITCHING-AID-CIRCUIT ENERGY RECOVERY
    WILLIAMS, BW
    IEE PROCEEDINGS-B ELECTRIC POWER APPLICATIONS, 1984, 131 (01): : 7 - 12
  • [39] A GaN-SiC hybrid material for high-frequency and power electronics
    Chen, Jr-Tai
    Bergsten, Johan
    Lu, Jun
    Janzen, Erik
    Thorsell, Mattias
    Hultman, Lars
    Rorsman, Niklas
    Kordina, Olof
    APPLIED PHYSICS LETTERS, 2018, 113 (04)
  • [40] HIGH-FREQUENCY LOSS
    BURSTEIN, H
    AUDIO, 1975, 59 (03): : 6 - 6