Bulk-defect dependent adsorption on a metal oxide surface:: S/TiO2(110)

被引：34
|
作者：
Hebenstreit, ELD
Hebenstreit, W
Geisler, H
Ventrice, CA
Sprunger, PT
Diebold, U [1 ]
机构：
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Vienna Univ Technol, Inst Allgemeine Phys, A-1040 Vienna, Austria
[3] Xavier Univ, Dept Chem, New Orleans, LA 70125 USA
[4] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA
[5] Louisiana State Univ, CAMD, Baton Rouge, LA 70806 USA
来源：
SURFACE SCIENCE | 2001年 / 486卷 / 03期
关键词：
scanning tunneling microscopy; photoelectron spectroscopy; titanium oxide; sulphur; low index single crystal surfaces; surface defects; chemisorption; diffusion and migration;
D O I：
10.1016/S0039-6028(01)01067-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The adsorption of molecular sulfur on TiO2(110)(1 x 1) has been studied with scanning tunneling microscopy and photoelectron spectroscopy. At room temperature S binds dissociatively to 5-fold coordinated Ti atoms and oxygen vacancies. At elevated temperatures (120-440 degreesC) sulfur replaces surface oxygen atoms. Evidence was found that the reduction state of TiO2 crystals strongly affects the surface coverage of S at elevated temperatures. The rate of the O-S site exchange is kinetically limited by the arrival of diffusing bulk defects at the surface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L467 / L474
页数：8
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