Photoluminescence properties of ZnO/ZnMgO multiple quantum wells under high excitation

被引：3

作者：

Su, Binbin ^{[1
]}

He, Haiping ^{[1
]}

Zhang, Honghai ^{[1
]}

Pan, Xinhua ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 139卷

基金：

中国国家自然科学基金;

关键词：

Zinc oxide; Multiple quantum wells; Photoluminescence; Excitons; OPTICAL-PROPERTIES; EXCITON; EFFICIENCY; ENHANCEMENT;

D O I：

10.1016/j.spmi.2020.106418

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO/ZnMgO multiple quantum wells (MQWs) were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Optical properties of the MQWs under high excitation were investigated by temperature- and excitation intensity-dependent photoluminescence spectroscopy. For weak confinement, increasing the excitation intensity leads to escape of excitons from the MQWs and appearance of ZnMgO barrier emission. While for better confinement, the ZnMgO barrier emission is almost independent on temperature and excitation intensity. The internal quantum efficiency of the MQWs increases monotonously with excitation intensity, reaching a highest value of 47% at room temperature, which suggests high quality of the MQWs.

引用

页数：6

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