Reliability of Commercially Available SiC Power MOSFETs

被引：1
|
作者：
Lelis, A. J. [1 ]
Green, R. [1 ]
El, M. [1 ]
Habersat, D. B. [1 ]
机构：
[1] US Army Res Lab, Adelphi, MD 20783 USA
来源：
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4 | 2014年 / 64卷 / 07期
关键词：
THRESHOLD-VOLTAGE INSTABILITY; TEMPERATURE; STRESS; DEGRADATION; DEPENDENCE; STABILITY; ISSUES;
D O I：
10.1149/06407.0079ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Results are presented indicating a disparity in the response of different vendors' commercially available SiC power MOSFETs to bias temperature stressing. In addition, it was observed that bias-temperature stress under negative gate bias led to larger shifts in the threshold voltage than under positive gate bias.
引用
收藏
页码：79 / 85
页数：7
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