ELECTRICAL RELIABILITY OF Cu/Sn MICRO-BUMP IN WAFER LEVEL PACKAGING FOR BioMEMS DEVICES

被引：0

作者：

Jeong, Myeong-Hyeok ^{[1
]}

Kim, Jae-Won ^{[1
]}

Kwak, Byung-Hyun ^{[1
]}

Park, Young-Bae ^{[1
]}

Kim, Byoung-Joon ^{[2
]}

Joo, Young-Chang ^{[2
]}

机构：

[1] Andong Natl Univ, Sch Mat Sci & Engn, Andong 760749, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

BIODEVICES 2011 | 2011年

关键词：

Cu/Sn micro-bump; Electromigration; Wafer Level Packaging; BioMEMS Devices; ELECTROMIGRATION;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

The electrical reliability of Cu/Sn micro-bump in wafer level packaging for advanced BioMEMS devices applications were systematically investigated during current stressing condition. After bump bonding, Cu3Sn and Cu6Sn5 intemietallic phases were observed, and Cu3Sn formed and grew at Cu pillar/Cu6Sn5 interface with increasing annealing and current stressing time. The kinetics of intermetallic compound growth changed when all Sn in Cu/Sn micro-bump was exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. Under current stressing condition, intermetallic compound growth was significantly enhanced by current stressing where the growth rate follows a linear relationship with stressing time.

引用

页码：311 / +

页数：2

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