Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators

被引：18
|
作者：
Vorobiev, A. [1 ]
Berge, J. [1 ]
Gevorgian, S. [1 ]
Loffler, M. [2 ]
Olsson, E. [2 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 02期
基金：
瑞典研究理事会;
关键词：
Q factor measurement - Titanium dioxide - Acoustic waves - Interfaces (materials) - Strontium compounds - Barium compounds - Acoustic resonators - Platinum;
D O I：
10.1063/1.3610513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunable 5.2 GHz bulk acoustic wave resonators utilizing BaxSr1-xTiO3 ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO2-x in the Pt layer. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610513]
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页数：4
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