Anomalous Nernst effect in Cox(MgO)1-x granular thin films

被引：14
|
作者：
Sheng, P. [1 ]
Fujita, T. [2 ,3 ]
Mizuguchi, M. [1 ,3 ,4 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Kochi Univ Technol, Sch Environm Sci & Engn, Kochi 7828502, Japan
[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[4] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 14期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.5140461
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The anomalous Nernst effect (ANE) is investigated for 100nm Co-x(MgO)(1-x) granular films as a function of the Co volume fraction (x) changes. The results show that by slightly adding MgO into the Co matrix, the anomalous Nernst angle (theta(AN)) can be largely enhanced more than three times compared with that of pure Co, which also results in the obvious change in ANE voltage. The transverse conductivity sigma XYA sigma XX shows distinct linear behavior in three regimes, which indicates different anomalous Hall effect (AHE) mechanisms. By qualitative Mott-relation analysis, we found that the non-monotonic dependence of ANE on x is associated with the change in AHE mechanisms.
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页数：5
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