Spectroscopic Ellipsometry Investigations of Optical Anisotropy in Obliquely Deposited Hafnia Thin Films

被引：1

作者：

Tokas, R. B. ^{[1
]}

Jena, Shuvendu ^{[1
]}

Haque, S. Maidul ^{[2
]}

Rao, K. Divakar ^{[2
]}

Thakur, S. ^{[1
]}

Sahoo, N. K. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Bombay 85, Maharashtra, India

[2] Bhabha Atom Res Ctr Facil, Photon & Nanotechnol Sect, Atom & Mol Phys Div, Visakhapatnam 530012, Andhra Pradesh, India

来源：

DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷

关键词：

Oblique angle deposition; spectroscopic ellipsometry; optical properties; optical anisotropy;

D O I：

10.1063/1.4947813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In present work, HfO2 thin films have been deposited at various oblique incidences on Si substrates by electron beam evaporation. These refractory oxide films exhibited anisotropy in refractive index predictably due to special columnar microstructure. Spectroscopic ellipsometry being a powerful tool for optical characterization has been employed to investigate optical anisotropy. It was observed that the film deposited at glancing angle (80 degrees) exhibits the highest optical anisotropy. Further, anisotropy was noticed to decrease with lower values of deposition angles while effective refractive index depicts opposite trend. Variation in refractive index and anisotropy has been explained in light of atomic shadowing during growth of thin films at oblique angles.

引用

页数：3

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