The Radioelectric effect in doped superlattices under the influence of confined phonon

The Radioelectric effect in doped superlattices under the influence of confined phonon has been theoretically studied. The analytical expression for the Radioelectric field is obtained by quantum kinetic equation method. The theoretical expression shows that the Radioelectric field in doped superlattices depends on the frequencies and amplitudes of the laser and the linearly polarized electromagnetic wave, the period of the superlattices and especially the quantum number m characterizing the phonon confinement. Numerical calculation is also applied for GaAs:Si/GaAs:Be doped superlattices. It is found that the Radioelectric field is different from that in the normal bulk semiconductor as well as two-dimensional systems in case of unconfined phonon and in case of confined phonon when the contribution of confined potential of doped superlattices and confined phonon is remarkable. The Radioelectric field has multiple resonance peaks and increases as the increasing of quantum number m.