Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

被引：72

作者：

Inazu, Tetsuhiko ^{[1
]}

Fukahori, Shinya ^{[1
]}

Pernot, Cyril ^{[1
]}

Kim, Myung Hee ^{[1
]}

Fujita, Takehiko ^{[1
]}

Nagasawa, Yosuke ^{[1
]}

Hirano, Akira ^{[1
]}

Ippommatsu, Masamichi ^{[1
]}

Iwaya, Motoaki ^{[2
]}

Takeuchi, Tetsuya ^{[2
]}

Kamiyama, Satoshi ^{[2
]}

Yamaguchi, Masahito ^{[3
]}

Honda, Yoshio ^{[3
]}

Amano, Hiroshi ^{[3
]}

Akasaki, Isamu ^{[2
]}

机构：

[1] Meijo Univ, UV Craftory Co Ltd, Nagoya, Aichi 4680073, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 12期

关键词：

D O I：

10.1143/JJAP.50.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with aluminum reflective electrodes deposited to cover both p-and n-mesh contact electrodes have been fabricated. A 1.55-fold increase in light extraction efficiency has been demonstrated. Despite their reduced contact area, the LEDs exhibited only a slight increase in forward voltage of 0.45 V at 20 mA. Also, their 50% lifetime was estimated to be about 10,000 h at 20mA DC at room temperature by extrapolation. Owing to the reflective electrodes, a 288nm LED with external quantum efficiency as high as 5.4% was achieved. The light output power was 4.6mW at 20 mA. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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