Investigation of Self-Catalyzed GaAs NW Growth by Monte Carlo Simulation

被引：0
|
作者：
Suprunets, Anastasiya G. [1 ]
Vasilenko, Maxim A. [1 ]
Shwartz, Nataliya L. [1 ,2 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk, Russia
[2] AV Rzhanov Inst Semicond Phys SB RAS, Novosibirsk, Russia
来源：
2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM) | 2014年
关键词：
GaAs; nanowires; Monte Carlo; simulation; MOLECULAR-BEAM EPITAXY; MBE GROWTH; NANOWIRES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a kinetic lattice Monte Carlo model self-catalyzed growth of GaAs nanowire (NW) on GaAs(111) B surface was realized. Dependence of NW morphology on growth parameters was demonstrated. Existence of optimal temperature and gallium/arsenic flux ratio, corresponding to maximal GaAs nanowire growth rate, was shown. NW growth rate was linearly depended on arsenic flux in wide range of arsenic flux intensity. Obtained decreasing dependence of self-catalyzed NW growth rate on initial catalyst drop diameter was less abrupt than for catalytic growth. The optimal growth temperature of self-catalyzed growth was higher than of catalytic growth. Self-catalyzed growth was demonstrated to be more sensitive to gallium/arsenic flux ratio than catalytic one.
引用
收藏
页码：14 / 18
页数：5
相关论文
共 50 条
  • [21] Monte Carlo simulation of MBE growth of GaAs analysis of RHEED
    vanHall, PJ
    Kokten, H
    Leys, MR
    Bosch, M
    STABILITY OF MATERIALS, 1996, 355 : 229 - 234
  • [22] Examination of Catalytic GaAs Nanowire Growth by Monte Carlo Simulation
    Knyazeva, Maria V.
    Shwartz, Nataliya L.
    2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM), 2014, : 54 - 56
  • [23] Monte Carlo simulation of the kinetic effects on GaAs/GaAs(001) MBE growth
    Ageev, Oleg A.
    Solodovnik, Maxim S.
    Balakirev, Sergey V.
    Mikhaylin, Ilya A.
    Eremenko, Mikhail M.
    JOURNAL OF CRYSTAL GROWTH, 2017, 457 : 46 - 51
  • [24] Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)
    Krogstrup, Peter
    Popovitz-Biro, Ronit
    Johnson, Erik
    Madsen, Morten Hannibal
    Nygard, Jesper
    Shtrikman, Hadas
    NANO LETTERS, 2010, 10 (11) : 4475 - 4482
  • [25] Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy
    Bauer, Benedikt
    Rudolph, Andreas
    Soda, Marcello
    Fontcuberta i Morral, Anna
    Zweck, Josef
    Schuh, Dieter
    Reiger, Elisabeth
    NANOTECHNOLOGY, 2010, 21 (43)
  • [26] Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
    Jabeen, Fauzia
    Grillo, Vincenzo
    Rubini, Silvia
    Martelli, Faustino
    NANOTECHNOLOGY, 2008, 19 (27)
  • [27] Te-doping of self-catalyzed GaAs nanowires
    Suomalainen, S.
    Hakkarainen, T. V.
    Salminen, T.
    Koskinen, R.
    Honkanen, M.
    Luna, E.
    Guina, Mircea
    APPLIED PHYSICS LETTERS, 2015, 107 (01)
  • [28] Novel self-catalyzed GaAs nanowires with electrical contacts
    Piton, Marcelo R.
    Koivusalo, Eero
    Suomalainen, Soile
    Hakkarainen, Teemu
    Guina, Mircea
    2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,
  • [29] Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires
    Priante, Giacomo
    Patriarche, Gilles
    Oehler, Fabrice
    Glas, Frank
    Harmand, Jean-Christophe
    NANO LETTERS, 2015, 15 (09) : 6036 - 6041
  • [30] Field Emission from Self-Catalyzed GaAs Nanowires
    Giubileo, Filippo
    Di Bartolomeo, Antonio
    Iemmo, Laura
    Luongo, Giuseppe
    Passacantando, Maurizio
    Koivusalo, Eero
    Hakkarainen, Teemu V.
    Guina, Mircea
    NANOMATERIALS, 2017, 7 (09):
12345