Investigation of Self-Catalyzed GaAs NW Growth by Monte Carlo Simulation

被引：0
|
作者：
Suprunets, Anastasiya G. [1 ]
Vasilenko, Maxim A. [1 ]
Shwartz, Nataliya L. [1 ,2 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk, Russia
[2] AV Rzhanov Inst Semicond Phys SB RAS, Novosibirsk, Russia
来源：
2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM) | 2014年
关键词：
GaAs; nanowires; Monte Carlo; simulation; MOLECULAR-BEAM EPITAXY; MBE GROWTH; NANOWIRES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a kinetic lattice Monte Carlo model self-catalyzed growth of GaAs nanowire (NW) on GaAs(111) B surface was realized. Dependence of NW morphology on growth parameters was demonstrated. Existence of optimal temperature and gallium/arsenic flux ratio, corresponding to maximal GaAs nanowire growth rate, was shown. NW growth rate was linearly depended on arsenic flux in wide range of arsenic flux intensity. Obtained decreasing dependence of self-catalyzed NW growth rate on initial catalyst drop diameter was less abrupt than for catalytic growth. The optimal growth temperature of self-catalyzed growth was higher than of catalytic growth. Self-catalyzed growth was demonstrated to be more sensitive to gallium/arsenic flux ratio than catalytic one.
引用
收藏
页码：14 / 18
页数：5
相关论文
共 50 条
  • [1] Self-catalyzed GaAs and InAs nanowire growth (Monte Carlo simulation)
    Suprunets, A. G.
    Vasilenko, M. A.
    Shwartz, N. L.
    17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS (RYCPS 2015), 2016, 690
  • [2] Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation
    A. G. Nastovjak
    A. G. Usenkova
    N. L. Shwartz
    I. G. Neizvestny
    Semiconductors, 2019, 53 : 2106 - 2109
  • [3] Examination of Self-Catalyzed III-V Nanowire Growth by Monte Carlo Simulation
    Nastovjak, A. G.
    Usenkova, A. G.
    Shwartz, N. L.
    Neizvestny, I. G.
    SEMICONDUCTORS, 2019, 53 (16) : 2106 - 2109
  • [4] Interatomic potential for atomistic simulation of self-catalyzed GaAs nanowires growth
    Soares Oliveira, Douglas
    Alonso Cotta, Mônica
    Eduardo Padilha, José
    Soares Oliveira, Douglas (douglas.oliveira@ufpr.br), 1600, Elsevier B.V., Netherlands (183):
  • [5] Interatomic potential for atomistic simulation of self-catalyzed GaAs nanowires growth
    Oliveira, Douglas Soares
    Cotta, Monica Alonso
    Padilha, Jose Eduardo
    COMPUTATIONAL MATERIALS SCIENCE, 2020, 183
  • [6] Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth
    Knyazeva, M. V.
    Nastovjak, A. G.
    Neizvestny, I. G.
    Shwartz, N. L.
    SEMICONDUCTORS, 2015, 49 (01) : 60 - 68
  • [7] Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires
    Ramdani, Mohammed Reda
    Harmand, Jean Christophe
    Glas, Frank
    Patriarche, Gilles
    Travers, Laurent
    CRYSTAL GROWTH & DESIGN, 2013, 13 (01) : 91 - 96
  • [8] Self-catalyzed growth of GaAs nanowires on silicon by HYPE
    Dong, Zhenning
    Andre, Yamina
    Dubrovskii, Vladimir
    Bougerol, Catherine
    Monier, Guillaume
    Ramdani, Reda
    Trassoudaine, Agnes
    Leroux, Christine
    Castelluci, Dominique
    Gil, Evelyne
    2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO), 2016,
  • [9] Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth
    M. V. Knyazeva
    A. G. Nastovjak
    I. G. Neizvestny
    N. L. Shwartz
    Semiconductors, 2015, 49 : 60 - 68
  • [10] The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires
    Koivusalo, Eero
    Hilska, Joonas
    Galeti, Helder V. A.
    Galvao Gobato, Yara
    Guina, Mircea
    Hakkarainen, Teemu
    NANOTECHNOLOGY, 2020, 31 (46)
12345