Study of magnetic clusters using a tight binding molecular dynamics approach

被引:0
|
作者
Andriotis, AN
Lathiotakis, NN
Menon, M
机构
关键词
D O I
暂无
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The tight-binding molecular-dynamics (TBMD) method has been proved to be a useful tool in the study of semiconductors. Recently, we extended this method to the study of transition metal systems. Our applications to non-magnetic clusters of transition metal atoms gave results for the binding energies, bond lengths and vibration frequencies of Ni-n clusters (n upto 55) in very good agreement with both theory and experiment. In the present work we extend the applicability of the formalism to include the study of magnetic properties of the Ni-n, Fe-n, and Co-n clusters (n less than or equal to 55). This is achieved by incorporating an exchange splitting term in the TBMD Hamiltonian. It is shown that the results obtained for the magnetic moment (per atom) for Ni, Fe and Co clusters are in very good agreement with recent experimental data, thus establishing the validity of our scheme in the treatment of magnetic systems and/or their alloys.
引用
收藏
页码:261 / 266
页数:6
相关论文
共 50 条
  • [41] Ground state geometries and vibrational spectra of small hydrogenated silicon clusters using nonorthogonal tight-binding molecular dynamics
    Gupte, GR
    Prasad, R
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1998, 12 (15): : 1607 - 1622
  • [42] MOLECULAR SWITCH - A TIGHT-BINDING APPROACH
    JOACHIM, C
    JOURNAL OF MOLECULAR ELECTRONICS, 1988, 4 (02): : 125 - 136
  • [43] RELAXATION OF ICOSAHEDRAL-CAGE SILICON CLUSTERS VIA TIGHT-BINDING MOLECULAR-DYNAMICS
    KHAN, FS
    BROUGHTON, JQ
    PHYSICAL REVIEW B, 1991, 43 (14): : 11754 - 11761
  • [44] Tight-binding molecular dynamics simulation of Si-H bond dissociation in silicon clusters
    Khakimov, ZM
    Umarova, FT
    Sulaymonov, NT
    Kiv, AE
    Levin, AA
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2003, 93 (05) : 351 - 359
  • [45] Simulation of vacancy pairs in GaN using tight-binding molecular dynamics
    Boucher, DE
    Gal, ZA
    DeLeo, GG
    Fowler, WB
    NITRIDE SEMICONDUCTORS, 1998, 482 : 941 - 946
  • [46] PHONONS IN GRAPHITIC TUBULES - A TIGHT-BINDING MOLECULAR-DYNAMICS STUDY
    YU, J
    KALIA, RK
    VASHISHTA, P
    JOURNAL OF CHEMICAL PHYSICS, 1995, 103 (15): : 6697 - 6705
  • [47] TIGHT-BINDING MOLECULAR-DYNAMICS STUDY OF AMORPHOUS-CARBON
    WANG, CZ
    HO, KM
    CHAN, CT
    PHYSICAL REVIEW LETTERS, 1993, 70 (05) : 611 - 614
  • [48] Hydrogen diffusion in crystalline silicon: A tight-binding molecular dynamics study
    Panzarini, G.
    Colombo, L.
    PHASE TRANSITIONS, 1994, 52 (2-3) : 137 - 149
  • [49] O(N) tight-binding molecular dynamics study of amorphous carbon
    Wang, CZ
    Qiu, SY
    Ho, KM
    COMPUTATIONAL MATERIALS SCIENCE, 1997, 7 (03) : 315 - 323
  • [50] High kinetic stability of hypercubane: Tight-binding molecular dynamics study
    Maslov, Mikhail M.
    Katin, Konstantin P.
    CHEMICAL PHYSICS LETTERS, 2016, 644 : 280 - 283