UV-LED using p-type GaN/AIN supperlattice cladding layer

被引：0

作者：

Iwaya, M ^{[1
]}

Terao, S ^{[1
]}

Takanami, S ^{[1
]}

Miyazaki, A ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN/AlN supperlattice was used as the p-type cladding layer of UV-LED. I-V characteristics indicates that UV-LED having GaN/AlN supperlattice has much lower series resistance than the conventional UV-LED in which ternary alloy AlGaN was used as the cladding layer.

引用

页码：34 / 38

页数：5

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