Effect of p-type cladding layer and P++-GaN layer of InGaN/GaN MQWs blue LED

被引：0
|
作者：
Liao, Chun-Wei [1 ]
Lin, Yung-Hsiang [1 ]
Yen, Cheng-Ying [1 ]
Liu, Pei-Wen [1 ]
Lu, Yuan-Chieh [1 ]
Lin, Ray-Ming [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：314 / 315
页数：2
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