Diffusion of Ag, Sn, and Pb over Atomically Clean Ge(111) Surface

被引:2
|
作者
Dolbak, A. E. [1 ]
Zhachuk, R. A. [1 ]
机构
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
关键词
PHASE-TRANSITIONS; SI(111) SURFACES; STM; GE;
D O I
10.1134/S1063776119080028
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Auger electron spectroscopy and low-energy electron diffraction were used to study the diffusion of Ag, Sn, and Pb over the Ge (111) surface. The mechanisms of diffusion of atoms of these elements over the Ge(111) surface are determined, and the temperature dependences of the diffusion coefficients are measured. The parameters of diffusion of these elements over the Ge(111) and Si (111) surfaces are compared.
引用
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页码:391 / 396
页数:6
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