Thermal simulation of and characterization of AlGaN/GaN/Si high electron mobility transistors

被引：0
|
作者：
Hanreich, G [1 ]
Bychikhin, S [1 ]
Pogany, D [1 ]
Marso, M [1 ]
Kordos, P [1 ]
Nicolics, J [1 ]
机构：
[1] Univ Appl Sci, A-7423 Pinkafeld, Austria
来源：
2005 28TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.
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页码：144 / 145
页数：2
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