Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

The hysteresis in the dependence of the polarization P on the electric field E was simulated for a metal-ferroelectric-semiconductor structure with a perovskite semiconductor. The simulation is based on the analysis of an experimental P(E) hysteresis loop observed in a metal-ferroelectric-metal structure and approximated by hyperbolic tangent. Poisson's equation is numerically integrated with consideration for the dependence of the ferroelectric permittivity on electric field. The depolarizing action of the semiconductor reduces the remanent polarization several times, with the depolarization effect more pronounced for a semiconductor with lower impurity concentration. (C) 2001 MAIK "Nauka/ Interperiodica".