Simulation of hysteresis in a metal-ferroelectric-semiconductor structure

被引：6
|
作者：
Berman, LS [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 02期
关键词：
D O I：
10.1134/1.1349930
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The hysteresis in the dependence of the polarization P on the electric field E was simulated for a metal-ferroelectric-semiconductor structure with a perovskite semiconductor. The simulation is based on the analysis of an experimental P(E) hysteresis loop observed in a metal-ferroelectric-metal structure and approximated by hyperbolic tangent. Poisson's equation is numerically integrated with consideration for the dependence of the ferroelectric permittivity on electric field. The depolarizing action of the semiconductor reduces the remanent polarization several times, with the depolarization effect more pronounced for a semiconductor with lower impurity concentration. (C) 2001 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：193 / 195
页数：3
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