Embedded biomimetic nanostructures for enhanced optical absorption in thin-film solar cells

被引:19
|
作者
Tsai, Min-An [1 ]
Han, Hao-Wei [4 ]
Tsai, Yu-Lin [2 ,5 ]
Tseng, Ping-Chen [2 ,5 ]
Yu, Peichen [2 ,5 ]
Kuo, Hao-Chung [2 ,5 ]
Shen, Chang-Hong [3 ]
Shieh, Jia-Min [2 ,3 ,5 ]
Lin, Shiuan-Huei [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[3] Natl Nano Device Labs, Hsinchu 30078, Taiwan
[4] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan
[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源
OPTICS EXPRESS | 2011年 / 19卷 / 14期
关键词
AMORPHOUS-SILICON; BROAD-BAND; LIGHT; EFFICIENCY; ARRAYS;
D O I
10.1364/OE.19.00A757
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Light-management is critical to thin film solar cells due to their usually limited optical absorption in the active layer. Conventional approaches involve employing separate techniques for anti-reflection and light trapping. Here, we demonstrate an embedded biomimetic nanostructure (EBN) that achieves both effects for hydrogenated amorphous silicon (a-Si: H) solar cells. The fabrication of EBNs is accomplished by patterning an index-matching silicon-nitride layer deposited on a glass substrate using polystyrene nanospheres lithography, followed by reactive ion etching. The profile of EBN is then reproduced layer by layer during the deposition of a-Si: H cells. We show that a solar cell with an optimized EBN exhibits a broadband enhanced external quantum efficiency due to both antireflection and light-trapping, with respect to an industrial standard cell using an Asahi U glass substrate which is mostly optimized for light trapping. Overall, the cell with an optimized EBN achieves a large short-circuit current density of 17.74 mA/cm(2), corresponding to a 37.63% enhancement over a flat control cell. The power conversion efficiency is also increased from 5.36% to 8.32%. Moreover, the light management enabled by the EBN remains efficient over a wide range of incident angles up to 60 degrees, which is particularly desirable for real environments with diffused sun light. The novel patterning method is not restricted to a-Si:H solar cells, but is also widely applicable to other thin film materials. (C) 2011 Optical Society of America
引用
收藏
页码:A757 / A762
页数:6
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