Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation

被引：3
|
作者：
Wang, Chao-Hsun [1 ,2 ]
Chang, Shih-Pang [1 ,2 ]
Ku, Pu-Hsi [1 ,2 ]
Lan, Yu-Pin [1 ,2 ]
Lin, Chien-Chung [3 ]
Kuo, Hao-Chung [1 ,2 ]
Lu, Tien-Chang [1 ,2 ]
Wang, Shing-Chung [1 ,2 ]
Chang, Chun-Yen [4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Coll Photon, Inst Photon Syst, Tainan 71150, Taiwan
[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 04期
关键词：
D O I：
10.1143/APEX.5.042101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities. (C) 2012 The Japan Society of Applied Physics
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页数：3
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