Transparent electrode for UV light-emitting-diodes

被引：5

作者：

Takehara, Kosuke ^{[1
]}

Takeda, Kenichiro ^{[1
]}

Nagata, Kengo ^{[1
]}

Sakurai, Hisashi ^{[1
]}

Ito, Shun ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

Amano, Hiroshi ^{[2
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi, Japan

[2] Nagoya Univ, Grad Sch Engn, Akasaki Res Ctr, Nagoya, Aichi, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

UV-LED; ITO; transparent electrode;

D O I：

10.1002/pssc.201001148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the transparent electrodes using indium tin oxide (ITO) for UV light-emitting diodes (LEDs). The carrier concentration of ITO was increased from 1.1x10(18) to 1.5x10(21) cm(-3) after annealing under N-2 ambient at 600 degrees C. The fundamental absorption edge was also shifted to a shorter wavelength owing to the increase in carrier concentration, through the so-called the Burstein-Moss effect. The annealed ITO forms an ohmic contact with p-GaN with a specific contact resistance of 1.2x10(-3) Omega cm(2). The light output power of a 350 nm LED with the annealed ITO contact is 1.2 times higher than that with a conventional Ni/Au contact. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2375 / 2377

页数：3

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