Computer simulation of ion implantation at grazing ion-surface interactions

被引：0
|
作者：
Dzhurakhalov, AA [1 ]
Umarov, FF [1 ]
机构：
[1] Uzbek Acad Sci, Inst Elect, Tashkent 700143, Uzbekistan
来源：
2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The peculiarities of ion implantation into the one-component and binary crystal surface under conditions of low-energy ion bombardment at grazing incidence have been investigated by computer simulation. Tile depth distributions of 5 keV Ar ions implanted into Cu(001) surface and 1 keV Be and Se ions implanted into GaAs(001) for a range of grazing angles of incidence (3-30 degrees) have been calculated and presented.
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页码：232 / 234
页数：3
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