Computer simulation of ion implantation at grazing ion-surface interactions

被引：0

作者：

Dzhurakhalov, AA ^{[1
]}

Umarov, FF ^{[1
]}

机构：

[1] Uzbek Acad Sci, Inst Elect, Tashkent 700143, Uzbekistan

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The peculiarities of ion implantation into the one-component and binary crystal surface under conditions of low-energy ion bombardment at grazing incidence have been investigated by computer simulation. Tile depth distributions of 5 keV Ar ions implanted into Cu(001) surface and 1 keV Be and Se ions implanted into GaAs(001) for a range of grazing angles of incidence (3-30 degrees) have been calculated and presented.

引用

页码：232 / 234

页数：3

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