Switching behavior and its strain dependence in epitaxial CrO2 thin films

被引:2
|
作者
Spinu, L [1 ]
Srikanth, H
O'Conner, CJ
Gupta, A
Li, XW
Xiao, G
机构
[1] Univ New Orleans, AMRI, New Orleans, LA 70148 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
[3] Brown Univ, Dept Phys, Providence, RI 02912 USA
关键词
magnetic anisotropy; magnetoelastic energy; transverse susceptibility;
D O I
10.1109/20.951246
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chromium dioxide thin films grown epitaxially on TiO2 substrates exhibited a strong in-plane uniaxial anisotropy. Field dependence of high frequency (10(6) Hz) transverse susceptibility (chi (T)) measurements were used to probe the magnetic anisotropy and switching in CrO2 films for varying temperature (10 K to 300 K and different orientations of the applied field with respect to the magnetic easy axis. Singular peaks in chi (T) were observed and are associated with the anisotropy and switching fields. The chi (T) data at low temperatures reveal an unusual variation of the singular peaks. This can be described by including magnetoelastic contributions resulting from the in-plane tensile strain in the film. due to lattice mismatch with the substrate.
引用
收藏
页码:2596 / 2598
页数:3
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