Ferromagnetism in nanocrystalline epitaxial Co:TiO2 thin films -: art. no. 222503

被引:23
|
作者
Pradhan, AK
Hunter, D
Dadson, JB
Williams, TM
Zhang, K
Lord, K
Lasley, B
Rakhimov, RR
Zhang, J
Sellmyer, DJ
Roy, UN
Cui, Y
Burger, A
Hopkins, C
Pearson, N
Wilkerson, AL
机构
[1] Norfolk State Univ, Ctr Mat Res, Norfolk, VA 23504 USA
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[3] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA
[4] Fisk Univ, Dept Phys, Nashville, TN 37208 USA
[5] Coll William & Mary, Appl Res Ctr, Newport News, VA 23606 USA
基金
美国国家航空航天局;
关键词
D O I
10.1063/1.1944209
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the observation of remarkable room-temperature ferromagnetism in nanocrystalline epitaxial Co:TiO2 films grown on sapphire (0001) substrates by a pulsed-laser deposition technique using high-density targets. The films were characterized by x-ray measurements, atomic force microscopy, micro-Raman, electron-paramagnetic resonance, and magnetization studies. The films exhibit three-dimensional islandlike growth that contains nanocrystalline particles. Our experimental results suggest that the remarkable ferromagnetism in Co:TiO2 films is controlled either by the interstitial Co2+ ions or small clusters, which are mainly present at the interface and on the surface of the films. Our work clearly indicates that Co interstitials and nanoclusters cause room-temperature ferromagnetism in Co-doped TiO2. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 50 条
  • [31] Preparation and characterization of nanocrystalline TiO2 thin films
    Senthil, T. S.
    Muthukumarasamy, N.
    Agilan, S.
    Thambidurai, M.
    Balasundaraprabhu, R.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 174 (1-3): : 102 - 104
  • [32] Ferromagnetism in doped TiO2 thin films prepared by PLD
    Duhalde, S.
    Torres, C. E. Rodriguez
    Vignolo, M. F.
    Golmar, F.
    Chillote, C.
    Cabrera, A. F.
    Sanchez, F. H.
    COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 : 479 - +
  • [33] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
    Choi, BJ
    Jeong, DS
    Kim, SK
    Rohde, C
    Choi, S
    Oh, JH
    Kim, HJ
    Hwang, CS
    Szot, K
    Waser, R
    Reichenberg, B
    Tiedke, S
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
  • [34] In situ epitaxial growth of TiO2 on RuO2 nanorods with reactive sputtering -: art. no. 043115
    Cheng, KW
    Lin, YT
    Chen, CY
    Hsiung, CP
    Gan, JY
    Yeh, JW
    Hsieh, CH
    Chou, LJ
    APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
  • [35] Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901
    Oligschlaeger, R
    Waser, R
    Meyer, R
    Karthäuser, S
    Dittmann, R
    APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
  • [36] Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films -: art. no. 024107
    Ríos, S
    Scott, JF
    Lookman, A
    McAneney, J
    Bowman, RM
    Gregg, JM
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)
  • [37] Superparamagnetism in Co ion-implanted epitaxial anatase TiO2 thin films
    Kim, DH
    Yang, JS
    Kim, YS
    Chang, YJ
    Noh, TW
    Bu, SD
    Kim, YW
    Park, YD
    Pearton, SJ
    Park, JH
    ANNALEN DER PHYSIK, 2004, 13 (1-2) : 70 - 71
  • [38] Cobalt valence states and origins of ferromagnetism in Co doped TiO2 rutile thin films
    Murakami, M
    Matsumoto, Y
    Hasegawa, T
    Ahmet, P
    Nakajima, K
    Chikyow, T
    Ofuchi, H
    Nakai, I
    Koinuma, H
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5330 - 5333
  • [39] Epitaxial strain and superconductivity in La2-xSrxCuO4 thin films -: art. no. 107001
    Bozovic, I
    Logvenov, G
    Belca, I
    Narimbetov, B
    Sveklo, I
    PHYSICAL REVIEW LETTERS, 2002, 89 (10) : 107001 - 107001
  • [40] Magnetic structure of V:TiO2 and Cr:TiO2 thin films from magnetic force microscopy measurements -: art. no. 10D323
    Hong, NH
    Ruyter, A
    Gervais, F
    Prellier, W
    Sakai, J
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)