Damage in crystalline silicon by swift heavy ion irradiation

被引：23
|
作者：
Osmani, O. [1 ,2 ,3 ,4 ]
Alzaher, I. [1 ,2 ,5 ]
Peters, T.
d'Etat, B. Ban [5 ]
Cassimi, A. [5 ]
Lebius, H. [5 ]
Monnet, I. [5 ]
Medvedev, N. [3 ,4 ,6 ]
Rethfeld, B. [3 ,4 ]
Schleberger, M. [1 ,2 ]
机构：
[1] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany
[2] Univ Duisburg Essen, CeNIDE, D-47048 Duisburg, Germany
[3] Tech Univ Kaiserslautern, Dept Phys, D-67653 Kaiserslautern, Germany
[4] Tech Univ Kaiserslautern, OPTIMAS Res Ctr, D-67653 Kaiserslautern, Germany
[5] UCBN, CIMAP, CEA, CNRS,ENSICAEN, F-14070 Caen 5, France
[6] DESY, Ctr Free Electron Laser Sci, D-22607 Hamburg, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 282卷
关键词：
Swift heavy ions; Silicon; Thermal spike; Two-temperature model; TRANSIENT THERMAL-PROCESS; TRACKS; SEMICONDUCTORS; FULLERENES; INSULATORS; CREATION; METALS;
D O I：
10.1016/j.nimb.2011.08.036
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have studied damage of crystalline Si surfaces induced by electronic energy loss of swift heavy ions with an electronic stopping power of up to S-e = 12 keV/nm. Scanning tunneling microscope images of the surface after irradiation under perpendicular as well as glancing angles of incidence showed no surface damage. We have performed theoretical calculations for the damage threshold within the two temperature model, resulting in S-e(th) = 8 keV/nm as the minimum stopping power to create a molten zone. We investigate the respective influence of the electron-phonon coupling, of the criterion at which the damage occurs and a possible effect of ballistic electrons. We show that the latter has the strongest effect on the calculated damage threshold. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：43 / 47
页数：5
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