GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3

A new method of GaN growth from Ga solution with NH3 has been developed. The method is characterized by the use of a thin layer of Ga wetting solution formed on a rotating substrate and chemical reaction with NH3 at the solution surface. The growth experiments, performed at 980degreesC with NH3 supply rate of 9 seem for 30 h, resulted in the layer mode growth of about 4mum thickness on a part of Si-face of a 6H-SiC substrate. The thickness of wetting solution required for creating suitable super-saturation is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.