Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection

被引：1
|
作者：
Lin, Wei-Hsun [1 ]
Lin, Shih-Yen [2 ,3 ,4 ]
Tseng, Chi-Che [5 ]
Kung, Shu-Yen [1 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Wu, Meng-Chyi [1 ,5 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[4] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung 20224, Taiwan
[5] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
来源：
INFRARED PHYSICS & TECHNOLOGY | 2011年 / 54卷 / 03期
关键词：
Quantum-dot infrared photodetectors; Quantum dots; Multi-color detection; FOCAL-PLANE ARRAY; TEMPERATURE;
D O I：
10.1016/j.infrared.2010.12.017
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：220 / 223
页数：4
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