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- [34] Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin FilmsIEEE ELECTRON DEVICE LETTERS, 2018, 39 (08) : 1207 - 1210Cao, Rongrong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Yan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhao, Shengjie论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaYang, Yang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhao, Xiaolong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Wei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhang, Xumeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLv, Hangbing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLiu, Qi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLiu, Ming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
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- [36] Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin filmsAPPLIED PHYSICS LETTERS, 2020, 117 (07)Lyu, Jike论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, SpainFina, Ignasi论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, SpainSanchez, Florencio论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Barcelona 08193, Spain
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