Reflectance anisotropy of GaAs(100): Theory and experiment

被引：95
|
作者：
Shkrebtii, AI
Esser, N
Richter, W
Schmidt, WG
Bechstedt, F
Fimland, BO
Kley, A
Del Sole, R
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, Sekretariat PN 6 1, D-10623 Berlin, Germany
[2] Friedrich Schiller Univ, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
[3] Norwegian Univ Sci & Technol, Dept Phys Elect, Trondheim, Norway
[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[5] Univ Roma Tor Vergata, Dipartimento Fis, Inst Nazl Fis Mat, I-00133 Rome, Italy
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.81.721
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The reflectance anisotropy has been calculated by microscopic tight-binding theory for various configurations of the As-rich GaAs(100) c(4 x 4) and (2 x 4) reconstructions, based on precise atomic coordinates from ab initio total-energy minimization. The comparison to experimental reflectance anisotropy in combination with scanning tunneling microscopy and low energy electron diffraction allows one to identify precise correlations between structural units and optical features. Clear indications are obtained for the intermediate steps in the surface reconstruction transformation.
引用
收藏
页码：721 / 724
页数：4
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