Visible photoluminescence in carbon-implanted thermal SiO2 films

被引：0
|
作者：
Yu, YH [1 ]
Wong, SP
Wilson, IH
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 168卷 / 02期
关键词：
D O I：
10.1002/(SICI)1521-396X(199808)168:2<531::AID-PSSA531>3.0.CO;2-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structures formed after the implantation of carbon in thermal SiO2 and annealing presented visible photoluminescence (PL) bands at room temperature. The peak and intensity of PL bands depended strongly on the temperature of annealing. In addition, very weak PL bands were observed after the implantation of argon in thermal SiO2 and similar annealing. HRTEM was also used to characterize the microstructure of the carbon or argon implanted thermal SiO2 films. These observations showed that carbon aggregates were probably the origin of visible PL bands.
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页码：531 / 534
页数：4
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