Visible Photoluminescence of SiO2 Films Implanted with In+ and As+ Ions

Visible photoluminescence from SiO2 films implanted with In+ and As+ ions was studied at room temperature depending on the energy of As+ ions, the temperature of further annealing, and the exciting radiation wavelength. As+ ions with energies of 40, 80, or 135 keV and In+ ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions R-p(As)/R-p(In) p was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 degrees C and 1100 degrees C. Photoluminescence spectra were excited with laser radiation with wavelengths lambda(ex) = 442 and 473 nm. The spectra of photoluminescence under excitation with lambda(ex) = 473 nm had a peak at 550 nm, whose energy position was shifted to 520-530 nm at lambda(ex) = 442 nm. An increase in the ratio R-p(As)/R-p(In) was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.