Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

被引：49
|
作者：
Yao, Z. Q. [1 ,2 ,3 ]
He, B. [1 ,2 ]
Zhang, L. [3 ]
Zhuang, C. Q. [3 ]
Ng, T. W. [1 ,2 ]
Liu, S. L. [4 ]
Vogel, M. [3 ]
Kumar, A. [3 ]
Zhang, W. J. [1 ,2 ]
Lee, C. S. [1 ,2 ]
Lee, S. T. [1 ,2 ]
Jiang, X. [3 ]
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany
[4] Sichuan Univ, Analyt & Testing Ctr, Chengdu 610064, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期
关键词：
copper compounds; electrical conductivity; energy gap; Hall effect; hole mobility; semiconductor thin films; valence bands; wide band gap semiconductors;
D O I：
10.1063/1.3683499
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d(10) with Cu2+ 3d(9) orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (similar to 3.46-3.87 eV); Hall measurements verify the highest hole mobilities (similar to 11.3-39.5 cm(2)/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with I-on/I-off of similar to 8.0 x 10(2) and field effect mobility of 0.97 cm(2)/Vs. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3683499]
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页数：4
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