A Study of Drain Current in Presence of Hot Carrier Effect for Sub-micron MOS Devices

被引：0

作者：

Kumar, B. Naresh ^{[1
]}

Singh, Ajay Kumar ^{[1
]}

Prabhu, C. M. R. ^{[1
]}

机构：

[1] Multimedia Univ, Fac Engn & Technol, Melaka Campus, Cyberjaya, Malaysia

来源：

2014 2ND INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS AND SYSTEM ENGINEERING (ICEESE) | 2014年

关键词：

hot carrier; MOS device; sub-micron; substrate doping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we studied the drain current in sub-micron MOS device in presence of hot carrier. The current relation is derived after solving the Poisson equation for surface potential. The effect of hot electrons on the drain current is analyzed in detail. The effect of hot carriers on the current can be minimized by choosing moderate substrate doping. The drain current decreases with increase in voltage which is developed at the boundary of the damaged region and non-damaged region (V-P). The drain current is almost zero for larger damaged region irrespective of the sign of hot carrier charge density.

引用

页码：119 / 122

页数：4

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