Role of defects in Si/SiO2 quantum wells

被引：10

作者：

Degoli, E ^{[1
]}

Ossicini, S ^{[1
]}

机构：

[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

density functional calculations; low dimensional systems; oxygen vacancies; electronic and optical properties; quantum confinement;

D O I：

10.1016/S0925-3467(01)00027-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigated. Through ah initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. We find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confined systems. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：95 / 98

页数：4

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