Role of defects in Si/SiO2 quantum wells

被引：10
|
作者：
Degoli, E [1 ]
Ossicini, S [1 ]
机构：
[1] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy
来源：
OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期
关键词：
density functional calculations; low dimensional systems; oxygen vacancies; electronic and optical properties; quantum confinement;
D O I：
10.1016/S0925-3467(01)00027-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigated. Through ah initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. We find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confined systems. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：95 / 98
页数：4
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