Debye temperature dependent lattice thermal conductivity of silicon

The temperature dependence of the Debye temperature theta(D)(T) was applied to analyze the lattice thermal conductivity of Si between 2 and 300 K. The analysis of experimental data in terms of the Dubey model of the two modes of conduction has been carried out by combining the relaxation time for phonon-phonon scattering, point defect scattering and boundary scattering. The relative importance of the contribution of each mode was examined by estimating their percentage contribution to the phonon conductivity. Agreement between theory and experiment is achieved over the whole temperature range of study.