Growth and nanostructure of InN thin films deposited by reactive magnetron sputtering

被引：22

作者：

Takai, O ^{[1
]}

Ikuta, K ^{[1
]}

Inoue, Y ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

THIN SOLID FILMS | 1998年 / 318卷 / 1-2期

关键词：

indium nitride; substrate; nanostructure;

D O I：

10.1016/S0040-6090(97)01154-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have prepared indium nitride (InN) thin films on glass and (0001) alpha-Al2O3 substrates by rf reactive magnetron sputtering and studied their growth and nanostructure using analytical techniques such as X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The growth and nanostructure are strongly affected by the He addition to the Ar-N-2 sputtering gas mixture. The c-axis preferentially oriented structure is formed by the He addition. This effect of the He addition occurs similarly both for glass and for(0001) alpha-Al2O3 substrates. (C) 1998 Elsevier Science S.A.

引用

页码：148 / 150

页数：3

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