III-Nitride Semiconductor Photoelectrodes

被引：2
|
作者：
Fujii, Katsushi [1 ,2 ]
机构：
[1] Univ Kitakyushu, Inst Environm Sci & Technol, Kitakyushu, Fukuoka, Japan
[2] RIKEN Ctr Adv Photon, Wako, Saitama, Japan
来源：
SEMICONDUCTORS FOR PHOTOCATALYSIS | 2017年 / 97卷
关键词：
N-TYPE GAN; P-TYPE GAN; HYDROGEN GENERATION; ELECTROLYTES; STABILITY; POTENTIALS; PHOTOANODE; EFFICIENCY; FLUX;
D O I：
10.1016/bs.semsem.2017.03.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：139 / 183
页数：45
相关论文
共 50 条
  • [41] III-Nitride Electronic Devices Preface
    Chu, Rongming
    Shinohara, Keisuke
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : XI - XII
  • [42] Defects in III-nitride microdisk cavities
    Ren, C. X.
    Puchtler, T. J.
    Zhu, T.
    Griffiths, J. T.
    Oliver, R. A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (03)
  • [43] Polarization doping for III-nitride optoelectronics
    Khokhlev, Oleg V.
    Bulashevich, Kirill A.
    Karpov, Sergey Yu.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (07): : 1369 - 1376
  • [44] Emerging Applications of III-Nitride Nanocrystals
    Liu, Xianhe
    Chowdhury, Faqrul A.
    Vanka, Srinivas
    Chu, Sheng
    Mi, Zetian
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (07):
  • [45] III-Nitride Nanowire Light Sources
    Bhattacharya, Pallab
    2014 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES, 2014, : 25 - 26
  • [46] III-Nitride microwave power transistors
    Moon, Jeong-Sun
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : 115 - 140
  • [47] Perspectives for III-nitride photonic platforms
    Boucaud, Philippe
    Bhat, Nagesh
    Gromovyi, Maksym
    El Kurdi, Moustafa
    Reserbat-Plantey, Antoine
    Dau, Minh Tuan
    Al Khalfioui, Mohamed
    Alloing, Blandine
    Damilano, Benjamin
    Semond, Fabrice
    NANO FUTURES, 2024, 8 (02)
  • [48] III-Nitride UV Emitters and Their Applications
    Khan, Asif
    2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
  • [49] III-nitride quantum devices - Microphotonics
    Jiang, HX
    Lin, JY
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2003, 28 (02) : 131 - 183
  • [50] Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
    Hung, Ting-Hsiang
    Esposto, Michele
    Rajan, Siddharth
    APPLIED PHYSICS LETTERS, 2011, 99 (16)
12345