Thickness-Dependent Hydroxylation of MgO(001) Thin Films

被引:54
|
作者
Carrasco, Esther [1 ]
Brown, Matthew A. [1 ]
Sterrer, Martin [1 ]
Freund, Hans-Joachim [1 ]
Kwapien, Karolina [2 ]
Sierka, Marek [2 ]
Sauer, Joachim [2 ]
机构
[1] Fritz Haber Inst Max Planck Gesellschaft, Dept Chem Phys, D-14195 Berlin, Germany
[2] Humboldt Univ, Dept Chem, D-10099 Berlin, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 42期
关键词
DENSITY-FUNCTIONAL THEORY; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; WATER DISSOCIATION; AB-INITIO; ELECTRONIC-STRUCTURE; AMBIENT CONDITIONS; MGO(100) SURFACES; AQUEOUS-SOLUTIONS; MGO SURFACE;
D O I
10.1021/jp105294e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydroxylation of MgO surfaces has been studied from UHV to mbar pressure for MgO(001) films of different thickness grown on Ag(001) by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, and density functional theory calculations. In agreement with earlier studies on MgO(001) single crystals, a threshold water pressure on the order of 10(-4) mbar is found for extensive hydroxylation of thick, bulklike MgO films. Decreasing the MgO film thickness shifts the threshold pressure to lower values, being 10(-6) mbar in the limit of 2 monolayer MgO(001)/Ag(001). This result is explained on the basis of the precursor state of periclase MgO(001) dissolution involving hydrolysis of Mg-O surface bonds. The enhanced structural flexibility (polaronic distortion) of the ultrathin MgO film facilitates surface hydroxylation by lowering the barrier for hydrolysis.
引用
收藏
页码:18207 / 18214
页数:8
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