Synthesis of silicon-oxygen derivatives in quasi-interstellar conditions

被引:0
|
作者
Devienne, FM
Barnabe, C
Couderc, M
Ourisson, G
机构
[1] Lab Phys Mol Hautes Energies, F-06530 Peymeinade, France
[2] Ctr Neurochim, F-67084 Strasbourg, France
关键词
interstellar dust; interstellar molecules; atomic impact; silicon-oxygen derivatives;
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bombardment of a silicon target in high vacuum with a molecular beam of krypton in the presence of thermal oxygen atoms produces ions, which give a primary spectrum. The individual peaks of this spectrum are extracted and dissociated in a collision cell. Mass analysis of the ions and of their fragments leads to the identification of silicon-oxygen derivatives, the composition of which is established by using the presence of the three naturally occurring isotopes of silicon. The derivatives formed represent a series of silicon suboxides ranging from SiO to Si10O3.SiO2 is weak, as expected from its normal existence as a three-dimensional lattice, nor as isolated molecules. (C) Academie des sciences/Elsevier, Paris.
引用
收藏
页码:425 / 429
页数:5
相关论文
共 50 条
  • [31] CHEMICAL-STATE ANALYSIS OF SILICON-OXYGEN COMPOUNDS
    GOHSHI, Y
    MIYAMOTO, H
    KUDO, M
    KAMADA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 412 - 414
  • [33] Microcrystalline silicon-oxygen alloys for application in silicon solar cells and modules
    Lambertz, A.
    Smirnov, V.
    Merdzhanova, T.
    Ding, K.
    Haas, S.
    Jost, G.
    Schropp, R. E. I.
    Finger, F.
    Rau, U.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 119 : 134 - 143
  • [34] PLANE SILICON-OXYGEN RINGS WITH MAXIMUM NUMBER OF TETRAHEDRA
    POBEDIMSKAYA, EA
    KRISTALLOGRAFIYA, 1977, 22 (02): : 393 - 393
  • [35] Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films
    Kodolbas, AO
    Çomak, B
    Bacioglu, A
    Öktü, Ö
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (05) : 426 - 431
  • [36] CHARACTERISTIC LOSSES OF ELECTRON-ENERGY IN THE SILICON-OXYGEN SYSTEM
    BAZHANOVA, NP
    KORABLEV, VV
    KOCHETOV, NI
    FIZIKA TVERDOGO TELA, 1982, 24 (06): : 1846 - 1848
  • [37] Influence of Ferrosilicon Addition on Silicon-oxygen Equilibria in High-silicon Steels
    Pindar, Sanjay
    Pande, Manish Marotrao
    ISIJ INTERNATIONAL, 2024, 64 (07) : 1143 - 1154
  • [38] FORMATION OF SILICON-OXYGEN INCLUSIONS WITH THE INTRODUCTION OF SOLID SILICON MONOXIDE INTO LIQUID STEEL
    NAZAROV, VF
    KOSOY, LF
    GROMOVA, GP
    RUSSIAN METALLURGY, 1978, (02): : 13 - 16
  • [39] Structure of high-photosensitivity silicon-oxygen alloy films
    Watanabe, H.
    Haga, K.
    Lohner, T.
    1600, Publ by Elsevier Science Publishers B.V., Amsterdam, Netherlands (164-66):
  • [40] PROTOTON MAGNETIC RESONANCE STUDY OF BASICITY OF SILICON-OXYGEN BOND
    HUGGINS, CM
    JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (10): : 1881 - &