The growth and photovoltaic properties of Si nanowires and ZnO nanowires hetero-branched structures

被引：2

作者：

Li, Ruxue ^{[1
]}

Wang, Xiaohua ^{[1
]}

Fang, Xuan ^{[1
]}

Zhao, Dongxu ^{[2
]}

Zhao, Haifeng ^{[2
]}

Zhang, Ligong ^{[2
]}

Fang, Dan ^{[1
]}

Li, Jinhua ^{[1
]}

Chu, Xueying ^{[1
]}

Tang, Jilong ^{[1
]}

Ma, Xiaohui ^{[1
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] Chang Chun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Lasers, Changchun, Peoples R China

[2] Nanchang Univ, Nanchang, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2016年 / 172卷 / 01期

关键词：

Si nanowires; ZnO nanowires; hetero-branched structures; photovoltaic; SENSITIZED SOLAR-CELLS; ARRAYS;

D O I：

10.1080/10584587.2016.1175331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Branched ZnO nanowires have been fabricated on p type Si nanowires by electrodeposition and formed a Si nanowires and ZnO nanowires branched core-shell structure. In these deposition process, Si nanowires could be used as the work electrode for ZnO directly depositing. The morphologies and growth region of ZnO could be controlled by adjusting the applied potential and deposition time. The structural and optical characterizations showed that ZnO nanowires synthesized on Si nanowires have the same physics property as synthesized on other conductive substrates and the optimal condition for ZnO growth. The I-V measurement based on the Si and ZnO p-n heterojunctions showed a typical semiconductor rectification characteristic, and the J-V measurement result indicated energy efficiency was 1.1%.

引用

页码：32 / 39

页数：8

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