Review of candidate devices for neuromorphic applications

被引:4
|
作者
Lee, Jong-Ho [1 ]
Woo, Sung Yun
Lee, Sung-Tae
Lim, Suhwan
Kang, Won-Mook
Seo, Young-Tak
Lee, Soochang
Kwon, Dongseok
Oh, Seongbin
Noh, Yoohyun
Kim, Hyeongsu
Kim, Jangsaeng
Bae, Jong-Ho
机构
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea
来源
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) | 2019年
基金
新加坡国家研究基金会;
关键词
neuromorphic systems; neural networks; synaptic devices; emerging memories; flash memories; SYNAPSE DEVICE; RRAM; MEMORY; ARRAY;
D O I
10.1109/essderc.2019.8901694
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Artificial intelligence technology has attracted much attention in recent years, and technological progress of this technology is anticipated with the development of semiconductor technology. This talk focuses on synaptic mimic devices to realize artificial intelligence with semiconductor memory technology. These synaptic devices affect cognitive accuracy along with conductance quantization and architecture. Therefore, we will first discuss from the architectural point of view and examine the characteristics of candidates for various synapse devices being reported. In particular, we concentrate on synaptic imitation devices that creatively use the functions of several flash memory devices. Finally, we discuss device variation and IR drop along metal wires as common challenges for synaptic devices, and how neuromorphic technology will evolve.
引用
收藏
页码:22 / 27
页数:6
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