Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy

被引：12
|
作者：
Ruda, H [1 ]
Shik, A [1 ]
机构：
[1] Univ Toronto, Energenius Ctr Adv Nanotechnol, Toronto, ON M5S 3E3, Canada
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.63.085203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electronic properties of GaAs grown by low-temperature molecular beam epitaxy are analyzed using a model that assumes a semiconducting matrix with embedded semimetallic As dusters. The static and high-frequency conductivity, Hall effect, lifetime of photoexcited carriers, current-voltage characteristic, and the screening phenomena art: all considered. Model results are compared with existing experimental data and a proposal is given for new experiments that could determine currently unknown properties of the material.
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页数：7
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