Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 mu m/min at deposition temperatures in the range of 500-650 degrees C. Hall-effect measurements show a majority carrier mobility of 200 cm(2)/V s at a hole concentration of 1.4x10(17) cm(-3) in our films. A minority carrier diffusion length of 4.5 mu m is determined from quantum efficiency measurements in the epitaxially grown Si films. (C) 1998 American Institute of Physics.