Large In-Plane Uniaxial Magnetic Anisotropy in the Ferromagnetic/Ferroelectric Heterostructures

被引：6
|
作者：
Wen, Dandan [1 ]
Zhang, Huaiwu [1 ]
Hui, Xinliang [1 ]
Wang, Yicheng [1 ]
Zhong, Zhiyong [1 ]
Bai, Feiming [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 11期
关键词：
Ferromagnetic resonance (FMR) frequency; heterostructures; magnetic anisotropy; FERROMAGNETIC-RESONANCE; VOLTAGE;
D O I：
10.1109/TMAG.2014.2322381
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous FeSiBC film with large magnetostriction and small magnetocrystalline anisotropy was deposited on the poled (110)-oriented Pb(Mg, Nb)O-3-PbTiO3 crystal substrate to form ferromagnetic/ferroelectric (FM/FE) heterostructures. It is shown that large in-plane uniaxial magnetic anisotropy (IPUMA)(> 250 Oe) can be induced upon applying in situ magnetic biasing field along the [001] direction during deposition. The IPUMA is tenfold of normally magnetic-field-induced anisotropy of FeSiBC/SiO2/Si with the same biasing magnetic field, therefore dramatically pushing the FM resonance frequency from 1 to 4.2 GHz. Our investigation shows that the FE domain of the poled Pb(Mg, Nb)O-3-PbTiO3 crystal can imprint into the FeSiBC layer and provide negative magnetic stress anisotropy upon applying biasing field along the [001] direction, but positive magnetic stress anisotropy upon applying biasing field along the [110] direction.
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页数：4
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