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Mechanisms of sustaining a radio-frequency atmospheric pressure planar discharge
被引:11
|作者:
Wang, Lei
[1
]
Dinescu, Gheorghe
[2
]
Deng, Xiaolong
[3
]
Ionita, Eusebiu-Rosini
[2
]
Leys, Christophe
[1
]
Nikiforov, Anton Yu
[1
]
机构:
[1] Univ Ghent, Dept Appl Phys, Sint Pietersnieuwstr 41 B4, B-9000 Ghent, Belgium
[2] Natl Inst Laser Plasma & Radiat, MG-36, RO-077125 Magurele, Ilfov, Romania
[3] Natl Univ Def & Technol, Coll Aerosp Sci & Engn, Changsha 410073, Hunan, Peoples R China
来源:
关键词:
capacitively coupled discharge;
time-resolved spectroscopy;
sheath dynamics;
plasma simulation;
large scale discharge;
PLASMA-JET;
SPECTROSCOPY;
SIMULATION;
HELIUM;
OXYGEN;
D O I:
10.1088/1361-6595/aa75e0
中图分类号:
O35 [流体力学];
O53 [等离子体物理学];
学科分类号:
070204 ;
080103 ;
080704 ;
摘要:
The time behavior of an atmospheric pressure planar discharge sustained in He gas was investigated experimentally and through two dimensional (2D) discharge simulation. The 30 mm long uniform a-mode discharge was observed at radio frequency (RF) input power below 35 W. The gas temperature of 375 +/- 50 K in the discharge core was estimated by emission spectroscopy of OH(A-X) emission. A sheath region of about 100-150 mu m width near both electrodes was observed during the whole RF cycle. However, there were differences in emission dynamics among various species detected in the discharge. OH(A) emission does not follow the RF voltage temporal variation. Strong He emission was always detected near the cathode, which was consistent with the 2D discharge simulation results. He-excited species production was found mainly due to the electron impact process. The simulation showed that both the electron and ion density vary from 1.88 x 10(17) m(-3) to 1.92 x 10(17) m(-3), and the electron temperature was about 1.85 eV in the plasma bulk. The ion temperature stayed close to the rotational temperature of OH radicals, and only increased near the sheath region to 0.65 eV. It was found that the mechanism of the sheath formation in atmospheric pressure discharge strongly correlates with the dynamics of the electron density and electron temperature variation in the gap, and the process is similar to low pressure RF capacitively coupled discharges. The high uniformity of the discharge and the upscale possibility to any desirable size are considered beneficial for industrial applications of the source, which is key for processes of thin coating deposition and polymer modification.
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页数:13
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