High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template

被引：14

作者：

Chen, Yunfeng ^{[1
,2
]}

Lu, Hai ^{[1
,2
]}

Chen, Dunjun ^{[1
,2
]}

Ren, Fangfang ^{[1
,2
]}

Zhang, Rong ^{[1
,2
]}

Zheng, Youdou ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 | 2016年 / 13卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

GaN; PCSS; HVPE; pulse power applications; PULSED-POWER; FE; HEMTS;

D O I：

10.1002/pssc.201510210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of similar to 10(10) Omega cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm(2) within a rise time of similar to 20 ns. The fall time of the photocurrent pulse is mainly RC time limited. (C) 2016 WILEY-VCH Verlag GmbH & Co.

引用

页码：374 / 377

页数：4

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