Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy

被引：23

作者：

Cai, Wensi ^{[1
]}

Wilson, Joshua ^{[1
]}

Zhang, Jiawei ^{[1
]}

Park, Seonghyun ^{[1
]}

Majewski, Leszek ^{[1
]}

Song, Aimin ^{[1
,2
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[2] Shandong Univ, Ctr Nanoelect, Sch Microelect, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 01期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会;

关键词：

Indium-gallium-zinc-oxide; thin-film transistors (TFTs); plastic substrate; 1 V operation; OXIDE; PERFORMANCE; DIELECTRICS; FABRICATION; ALUMINUM;

D O I：

10.1109/LED.2018.2882464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-gallium-zinc-oxide thin-film transistors gated with solution-processed, ultra-thin AlxOy have been fabricated on a plastic substrate. The effects of bending on the gate dielectric in terms of leakage current density and capacitance density have been studied. The devices show a low operating voltage of less than 1 V, a high current on/off ratio >10(5), and a low subthreshold swing <90 mV/decade. The devices maintain their high performance even when flexed to a curvature radius of 11 mm. As a result, such devices possess a great potential for low-power, flexible electronics.

引用

页码：36 / 39

页数：4

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